| 摘要 |
PURPOSE:To effectively and easily correct the side etching varying from each other in respective directions generated on an etched product by plotting an original plate of a mask for etching by using an aperture of a nonisotropic shape which is small in the diameter along the direction of large side etching and is large in the diameter along the direction of the small side etching. CONSTITUTION:The original plate of the mask for etching to be used for forming mask patterns is plotted by using the aperture 8 which has the elliptic shape having the aperture shape large in the diameter of a certain X direction and small in the diameter of the Y direction orthogonal therewith and by a photoplotter, etc., where 7, 71, 72 and 73 are the printing images plotted by using the aperture 8. The etching is executed by aligning the direction of the printing images plotted of fine widths among the printing images plotted by the elliptic aperture having the diameter large in the X direction and the diameter small in the Y direction orthogonal therewith to the transporting direction of the substrate. The patterns exact both vertically and horizontally are obtd. as the etched product in spite of the difference in the size of the side etching by directions. |
