| 摘要 |
PURPOSE:To simplify bump formation and improve the bonding reliability of a semiconductor device by preparing shaped bumps separately from leads, and connecting these bumps to leads by thermocompression bonding. CONSTITUTION:A punch 11 and a die 12 are used to punch a 50mum thick copper ribbon 13 into bumps 14, which are 80mum in diameter and 50mum in height. The bumps are forced into 30mum-deep hemispheric recesses 16 with 70mum diameter formed in a bump holder 15, so that hemispheric bumps are obtained. With a press plate 17, the bumps are compressed to a height of 35mum. The bump holder is moved to bring the bumps directly under inner leads 18. Then, the bumps and inner leads are connected by thermocompression bonding at a lead of 30gf with bonding tools 19 heated to 350 deg.C. In this way, bumps are formed on inner leads. |
