| 摘要 |
The processing method of the Ge/Li coaxial detector of ionising radiation concerns the fact that the thick diffusion layer of the front side of the coaxial detector, which is the inlet side for radiation, is ground at least to the "i" layer and hence the part of the "n" layer of the detector is removed. Afterwards, this part is etched by the mixture of fluorohydric acid and nitric acid in the ratio of 2 : 5 to 1 : 5, whereupon it is washed by deionised water and, immediately afterwards, implantation of ions of suitable dopant, phosphor or arsenic with the energy of 5 to 30 keV and dosing of 10 <14> to 10 <15> ions/cm<2> is carried out, then the detector is drifted at the temperature from 30 to 50 degrees C, whereupon the detector is encapsulated into cryostat, which is evacuated and submerged into liquid nitrogen.
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