SILICON ION IMPLANTED SEMICONDUCTOR DEVICE

摘要

. SILICON IMPLANTED SEMICONDUCTOR DEVICE A conductor-dielectric-semiconductor device and a method of making such a device which has an insulating silicon-dioxide dielectric layer on a silicon substrate, and a conductive layer over a region of the dielectric layer. Silicon ions have been implanted into the region under the conductive layer. Depending upon the thickness of the region and the concentration of implanted silicon ions, the device can function as an IGFET memory device or a vertical resistor between the conductive layer and the substrate.