| 摘要 |
PURPOSE:To form a superior resist pattern that is low in defects by forming the recessed part of a circuit pattern by the use of highly reflecting materials at an intermediate insulating film and forming a wiring circuit on the above recessed part after performing a contact process. CONSTITUTION:A negative pattern 15 that is made in the same manner as a circuit pattern which is formed by the use of highly reflecting materials at an intermediate insulating film 14 is formed and a recessed pattern 16 is formed after treating this film 14 by anisotropic etching and then a highly reflecting material film 17 is formed on the whole face. Subsequently, resist is applied and alignment is performed on the recessed pattern. After that, a resist pattern 18 is formed by irradiating the above film 17 with UV rays and developing it. The film 17 is etched by the use of the resist pattern 18 as a mask and a resist film is removed after performing patterning. Forming a wiring circuit in this way, the resist film does not receive light reflecting to stepped parts very much and forms the superior resist pattern that is low in defects. |
