发明名称 SEMICONDUCTOR LASER AMPLIFIERS
摘要 <p>A semiconductor laser amplifier includes both a waveguide layer (3) and an active layer (4). In use, an optical wave in the active layer (4) interacts with the waveguiding layer to reduce the polarisation sensitivity of the amplifier. A short, thick active layer is not required, typical dimensions being 250 or 500 νm long, by 0.2 νm high. The mesa (15) is typically about 2 νm wide, but may be wider.</p>
申请公布号 WO1990008411(A1) 申请公布日期 1990.07.26
申请号 GB1990000055 申请日期 1990.01.15
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