| 摘要 |
PURPOSE:To realize the formation of a fine cell size in one layer aluminum structure in such a way that its size is equal to that obtained in a two-layer aluminum structure and prevent the lowering of a yielding rate which is caused by the deterioration of an insulating film by forming the first and second cross coupled wiring layers by the use of a polycide layer. CONSTITUTION:Wiring of a cross couple part is composed of the first and second cross coupled layers 33a and 33b and these layers 33a and 33b are formed by a polycide layer. In a cross section of a static memory cell, polysilicon layers 32a and 32b are formed on a field oxide film 37 and an insulating layer 38 is formed between the polysilicon layers 32a and 32b and the polycide layer (the first cross coupling wiring 33a). Further, the polycide layer is isolated from an aluminum layer 34a by an insulating film 39. In this configuration, the polycide layer is used for the first and second cross coupling wiring layers 33a and 33b instead of a conventional aluminum layer. This step makes the number of aluminum wiring per a cell consist of three pieces of them and eliminates the need for having a two-layer aluminum structure. |
