发明名称 Ion implanting apparatus
摘要 In an ion implanting apparatus equipped with an electron shower for neutralizing the positive charge-up by the ion implantation with electrons, an electrically conductive tube is disposed just before the workpiece to be ion-implanted to pass through an ion beam which has a diameter nearly equal to the inner hollow channel of the tube section to absorb those electrons which do not overlap the positive ion beam, and a flange section extends substantially parallel to the surface of the workpiece to absorb the secondary electrons emitted from the ion implant portion thereby suppressing the negative change-up around the ion implanted portion.
申请公布号 US4914292(A) 申请公布日期 1990.04.03
申请号 US19880206055 申请日期 1988.06.13
申请人 SUMITOMO EATON NOVA CORPORATION 发明人 TAMAI, TADAMOTO;SATO, MASATERU
分类号 H01J37/02;H01J37/317;H01L21/265;H01L21/67 主分类号 H01J37/02
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