发明名称 |
Ion implanting apparatus |
摘要 |
In an ion implanting apparatus equipped with an electron shower for neutralizing the positive charge-up by the ion implantation with electrons, an electrically conductive tube is disposed just before the workpiece to be ion-implanted to pass through an ion beam which has a diameter nearly equal to the inner hollow channel of the tube section to absorb those electrons which do not overlap the positive ion beam, and a flange section extends substantially parallel to the surface of the workpiece to absorb the secondary electrons emitted from the ion implant portion thereby suppressing the negative change-up around the ion implanted portion.
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申请公布号 |
US4914292(A) |
申请公布日期 |
1990.04.03 |
申请号 |
US19880206055 |
申请日期 |
1988.06.13 |
申请人 |
SUMITOMO EATON NOVA CORPORATION |
发明人 |
TAMAI, TADAMOTO;SATO, MASATERU |
分类号 |
H01J37/02;H01J37/317;H01L21/265;H01L21/67 |
主分类号 |
H01J37/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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