发明名称 BARIUM TITANATE-BASED SEMICONDUCTOR PORCELAIN
摘要 PURPOSE:To reduce fluctuation in resistance due to temperature change in use environment and enable excellent communication in normal use when used for communication protectors by substituting part of barium in a barium titanate-based semiconductor porcelain with a specific element and forming a solid solution. CONSTITUTION:At least one selected from the group of rare earth elements, Y, Nb, Sb and Bi as a minor additive are added to BaTiO3 or a barium titanate-based porcelain composition consisting essentially of the BaTiO3 and containing Sr, Sn or Zr added for controlling the Curie point and further plural auxiliary additives for improving positive temperature coefficient(PTC) characteristics. In the resultant barium titanate-based semiconductor porcelain, the following constitutions (a) to (o) are adopted. Part of Ba is substituted with (a) 0.001-0.1 atomic% Mg to form a solid solution, (b) 0.01-5.0 atomic% Pb to form a solid solution or (c) simultaneously 0.001-0.1 atomic% Mg and 0.01-5.0 atomic% Pb to form a solid solution.
申请公布号 JPH0248465(A) 申请公布日期 1990.02.19
申请号 JP19880195753 申请日期 1988.08.05
申请人 HAKUSAN SEISAKUSHO:KK 发明人 TSUBONE DAISUKE
分类号 C04B35/46;H01C7/02 主分类号 C04B35/46
代理机构 代理人
主权项
地址