| 摘要 |
PURPOSE:To obtain a high temp. superconducting material effective in reducing contact resistance as the electrode wiring material of a semiconductor integrated circuit device made of Si, etc., by incorporating P, N, As or Sb into a high temp. superconductor of ceramic such as Y1Ba2Cu3O7. CONSTITUTION:R, N, As or Sb is allowed to penetrate into the surface of a high temp. superconductor of ceramic such as Y1Ba2Cu3O7 by thermal diffusion or ion implantation to convert the surface layer into a high temp. superconducting layer contg. P, N, As or Sb, e.g., a layer of Y0.5P0.5Ba2Cu3O7. The invasion of moisture into the surface of the resulting high temp. superconductor can be prevented by forming a nitride layer in the surface of the superconductor by N ion implantation or by forming a film of a heavy metal nitride such as Si3N4, TiN on the surface of the superconductor by CVD or sputtering. |
