发明名称 |
THYRISTOR OVERVOLTAGE PROTECTIVE CIRCUIT |
摘要 |
A high-power main thyristor is protected from forward voltage breakover by connecting in parallel relationship therewith an improved overvoltage responsive trigger scheme comprising at least one PNPN semiconductor element and a series L-C circuit. The PNPN element is connected between the anode and the gate of the main thyristor, and the L-C circuit is connected between the gate and the cathode. The element is selected to turn on in a voltage breakover mode when the forward bias voltage on the main thyristor attains a predetermined magnitude which is lower than the breakover level of the thyristor, whereupon the latter is triggered by a sharp gate punch.
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申请公布号 |
US3662250(A) |
申请公布日期 |
1972.05.09 |
申请号 |
US19700088853 |
申请日期 |
1970.11.12 |
申请人 |
GENERAL ELECTRIC CO. |
发明人 |
DANTE E. PICCONE;ISTVAN SOMOS |
分类号 |
H01L29/00;H02M1/00;H02M1/32;H03K17/082;(IPC1-7):H02M1/18 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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