发明名称 THYRISTOR OVERVOLTAGE PROTECTIVE CIRCUIT
摘要 A high-power main thyristor is protected from forward voltage breakover by connecting in parallel relationship therewith an improved overvoltage responsive trigger scheme comprising at least one PNPN semiconductor element and a series L-C circuit. The PNPN element is connected between the anode and the gate of the main thyristor, and the L-C circuit is connected between the gate and the cathode. The element is selected to turn on in a voltage breakover mode when the forward bias voltage on the main thyristor attains a predetermined magnitude which is lower than the breakover level of the thyristor, whereupon the latter is triggered by a sharp gate punch.
申请公布号 US3662250(A) 申请公布日期 1972.05.09
申请号 US19700088853 申请日期 1970.11.12
申请人 GENERAL ELECTRIC CO. 发明人 DANTE E. PICCONE;ISTVAN SOMOS
分类号 H01L29/00;H02M1/00;H02M1/32;H03K17/082;(IPC1-7):H02M1/18 主分类号 H01L29/00
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