发明名称 GRAIN BOUNDARY INSULATION TYPE SEMICONDUCTOR PORCELAIN COMPOSITION
摘要 PURPOSE:To obtain a capacitor in which high dielectric constant is obtained with small grain size, thickness can be reduced, stability and reliability of insulation resistance are not deteriorated by reduced thickness, large mechanical strength the large product of the dielectric constant and breakdown strength voltage are provided by employing the capacitor made of a specific composition. CONSTITUTION:A main ingredient is represented by a general formula of (Sr1-x-yBaxMy)(Ti1-zM'z)alphaO3+betaMnO2 (where M is at least one kind selected from rare earth elements, M' is at least one kind selected from Nb, Ta and W, and at least one kind of M, M' is contained), x, y+z, alpha are respectively 0.40<x<=0.60, 0.0005<=y+z<=0.03, 1.001<=alpha<=1.010, and 0.0001<=beta<=0.004, its crystal grain boundaries are insulated by at least one kind of oxide of one selected from Cu, Bi, Pb, B and Si, and its maximum grain size is 50mum or less. Or, one or more kinds of SiO2 and Al2O3 may be added by 0-0.1wt.% as sub- ingredient to 99.9-100wt.% of the main ingredient.
申请公布号 JPH01187917(A) 申请公布日期 1989.07.27
申请号 JP19880013365 申请日期 1988.01.22
申请人 MURATA MFG CO LTD 发明人 KACHI TOSHIAKI;WADA NOBUYUKI;TAMURA HIROSHI
分类号 H01B3/12;H01G4/12 主分类号 H01B3/12
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