METHOD OF PRODUCING A HIGHLY INTEGRATED CIRCUIT OF MOS FIELD-EFFECT TRANSISTORS,申请号DE19843477097-传众专利搜索

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发明名称	METHOD OF PRODUCING A HIGHLY INTEGRATED CIRCUIT OF MOS FIELD-EFFECT TRANSISTORS
摘要
申请公布号	DE3477097(D1)	申请公布日期	1989.04.13
申请号	DE19843477097	申请日期	1984.12.11
申请人	SIEMENS AKTIENGESELLSCHAFT BERLIN UND MUNCHEN	发明人	SCHEIBE, ADOLF, DR., ING. DIPL.-PHYS.
分类号	H01L21/82;H01L27/08;(IPC1-7):H01L21/82;H01L29/60	主分类号	H01L21/82
代理机构		代理人
主权项
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