Bipolar PROM having transistors with reduced base widths,申请号US19860929433-传众专利搜索

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发明名称	Bipolar PROM having transistors with reduced base widths
摘要
申请公布号	US4805141(A)	申请公布日期	1989.02.14
申请号	US19860929433	申请日期	1986.11.12
申请人	FUJITSU LIMITED	发明人	FUKUSHIMA, TOSHITAKA
分类号	G11C17/08;G11C17/16;H01L21/74;H01L23/525;H01L27/10;H01L27/102;H01L29/10;(IPC1-7):G11C17/00;H01L27/02	主分类号	G11C17/08
代理机构		代理人
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