| 摘要 |
PURPOSE:To contrive reduction in generation of defects in a semiconductor by a method wherein a semiconductor device is manufactured from a bent Si wafer, and a semiconductor is formed on the protruding face of the wafer. CONSTITUTION:A metal oxide semiconductor capacitor is formed on the protruding face of an Si wafer 1, and when the wafer is processed in the semiconductor manufacturing process, in which radiant rays are used, such as an X-ray lithographic method, for example, the surface of the wafer 1 is maintained flat by a vacuum check and the like. At this time, if the wafer 1 has the distortion that forms a processed protruding face of the wafer 1, the processed face is subjected to compressive stress by flattening. The radioactive ray resisting property of the thermally oxided film of a semiconductor device is enhanced by receiving compressive stress. As a result, the damage of the semiconductor being processed can be prevented. |
