发明名称 MANUFACTURE OF HERMETIC SEAL TYPE SEMICONDUCTOR DEVICE
摘要 PURPOSE:To enhance the insulation performance and the resistance to an environment of a terminal part by a method wherein, in a state that a stem has been turned over, a liquid insulating resin is dropped on the rear of the stem and an insulating sheet is attached to the stem part excluding the terminal part by applying a pressure. CONSTITUTION:In a state that a stem 1 has been turned over, a liquid insulating resin is dropped on the center of the rear of the stem 1. For this operation, a part where the insulating resin is to be dropped need not be necessarily the center of the rear of the stem; for example, the insulating resin may be dropped on the whole surface of the rear of the stem 1 excluding the neighborhood of terminals 8. In succession, an insulating sheet 14 where holes are made in positions corresponding to the terminal parts are fixed to said insulating resin by applying an appropriate pressure; this assembly is put in a heating device such as an oven, hardened and then bonded. As a result, an insulating material composed of an insulating resin layer 11 and the insulating sheet 14 is formed on the rear of the stem 1. By this setup, it is possible to coat the stem 1 with a small quantity of the insulating resin in a short time.
申请公布号 JPS63299254(A) 申请公布日期 1988.12.06
申请号 JP19870131632 申请日期 1987.05.29
申请人 TOSHIBA COMPONENTS KK 发明人 SHIGESAWA SHINJI
分类号 H01L23/02;H01L23/50 主分类号 H01L23/02
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