| 摘要 |
PURPOSE:To form a highly reliable wiring layer without wire breakdown at a step part when the wiring layer of a semiconductor device is formed, by forming recess parts at connecting hole parts, which are provided in a ground insulating film in a state the recess parts are filled with a first conductor layer, flattening the surface, and forming a second conductor layer thereon. CONSTITUTION:An aluminum layer 3 as a first conductor layer is deposited on the entire surface of a semiconductor substrate 1 including connecting holes by a sputtering method. A dry etching resisting material 4 is injected into recess parts, which are yielded in the first aluminum layer 3. The material is heated and hardened, and a mask is formed. Then, the first aluminum layer is etched in the vertical direction. Thereafter, the resist, which is the dry-etching resisting material 4, is removed by light ashing using oxygen plasma. An aluminum layer as a second conductor layer is formed on the semiconductor substrate by a method such as ordinary sputtering. The layer 5 is patterned. In this way, steps become remarkably small, and the reliability of a wiring layer is improved.
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