发明名称 REACTION FURNACE
摘要 PURPOSE:To prevent an undesirable oxidation from occurring on the surfaces of semiconductor wafers when the semiconductor wafers are taken out or inserted from or in an reaction tube by a method wherein heating sources are designed movally along the axis of the reaction tube. CONSTITUTION:Heaters 4 are designed movally along the axis of a reaction tube 3 and 4' shows the heater subsequent to move ment. By separating the heaters 4 from the tube 3, the interior of the tube 3 can be quenched. Accordingly, as a boat 2 can be inserted in a state that the tube 3 is cooled, semiconductor wafers 1 are never oxidized reluctantly with oxygen in the air. Moreover, even when a cap is opened and the boat 2 mounted with the wafers 1 is taken out of the interior of the tube 3, the taking-out is performed in a state that the heaters 4 are separated from the tube 3. Thereby, the surfaces of the wafers are never oxidized undesirably with oxygen in the air to come into when the cap is opened.
申请公布号 JPS63283124(A) 申请公布日期 1988.11.21
申请号 JP19870119209 申请日期 1987.05.15
申请人 MITSUBISHI ELECTRIC CORP 发明人 HIRAYAMA MAKOTO
分类号 H01L21/31;H01L21/22 主分类号 H01L21/31
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