METHOD FOR DEPOSITING SILICON OR GERMANIUM CONTAINING FILMS

摘要

The films (10) are formed on a substrate (9) by means of chemical vapor deposition where a gas atmosphere containing at least one silane or germane of a higher order is used. The gases forming the gas atmosphere are supplied to a region adjacent to the substrate (9) and an excitation energy is applied to those gases preferably with a glow discharge being generated. At least when the gas atmosphere additionally contains a gas reacting with the silane or the germane respectively the pressure of the reactive gases is kept below 0.133 mbar. …The films (10) formed consist of silicon or germanium respectively, or of compounds or alloys of these elements with oxygen, nitrogen, carbon and boron depending on the nature of the additionally available reactive gases. The films (10) preferably hydrated are useful in semiconducting devices.