| 摘要 |
PURPOSE:To prevent the wiring from disconnecting and from becoming highly resistive on a contact hole, by forming a sidewall composed of a polycrystal silicon film on the side surface of an aperture by performing reactive ion etching. CONSTITUTION:On the surface of a semiconductor substrate 1, a first insulating film (PSG film) 2 is formed directly or via a specified intermediate layer. By reactive etching, the first insulating film is eliminated, and an aperture is formed. A second insulating film (silicon oxide film) 4 and a polycrystal silicon film 5 are deposited in order in the aperture 8 and in the vicinity thereof. After that, the reactive etching is performed, and a sidewall 9 composed of the second insulating film 4 and a polycrystal silicon film 5 is formed to make up an interlayer insulating film provided with a contact hole 7. Thereby, disconnection does not generate even when an aluminum wiring 6 is formed on the contact hole 7, and the wiring resistance does not increase when the thickness of aluminum decreases on the step-difference part of the contact hole.
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