| 摘要 |
PURPOSE:To form a III-V compound film of a desired pattern without distinction of its crystal state of a substrate such as single crystal or polycrystal by forming selectively the III-V compound film on a nucleating face by utilizing the difference in density of the nucleation. CONSTITUTION:A III-V compound film is selectively formed only at a nucleating face by performing a compound film formation treatment to a base substance having a non-nucleating face that has small nucleation density as well as the nucleating face where its nucleation density is larger than that of the non-nucleating face. The deposit materials A, B, and C are selected so that the nucleation density of the deposit material C may be exceedingly different from those of the deposit materials A and B under a certain constant deposit condition. The nucleation density of the material A shall be large sufficiently and that of the material B is so small that it may be disregarded as compared to the material A. Once thin film 6 of the material B is deposited on a substrate 1 and ions of the material A are implanted in accordance with a desired pattern, a region 7 of the material A is formed in the form of the desired pattern. Then if the material C is deposited under the prescribed deposit condition, a deposit film 9 of the same pattern is formed on the basis of self-alignment. Thus, the deposit film of the desired pattern is formed with high accuracy. |
