| 摘要 |
PURPOSE:To obtain a blue light emission of high light emission efficiency by reducing the thickness and to increase the concentration of a P-type layer to use the layer side as a light irradiating side in a P-N junction light emitting element using zinc chalcogenide crystal containing S or Se. CONSTITUTION:In a P-N junction light emitting element using zinc chalcogenide containing S or Se, the carrier concentration of a P-type crystal layer 13 is increased by tens or more times than that of an N-type layer 12, the thickness of the layer 13 is set to 1.4mum or less, and the layer 13 side is used as a light irradiating side. That is, since a depletion layer is broadened by the N-type layer, when the P-N junction is forwardly biased, hole injection from a P-type crystal layer to an N-type crystal layer is controlled with respect to electron injection from the N-type layer to the P-type layer. Thus, a high blue light emission efficiency is obtained by a P-N junction using zinc chalcogenide. |
