| 摘要 |
PURPOSE:To eliminate the step difference between a source.drain and a gate, by forming an aperture at a part where the gate is to be formed, forming a gate oxide film on the surface of the aperture, and burying gate material in the aperture. CONSTITUTION:A semiconductor substrate 1 at the position where a gate in an element region is to be formed is subjected to an anisotropic etching, and an aperture 4 is formed. Then a gate insulating film 7 is formed, and gate material composed of polysilicon 8 is deposited, which is left on the aperture 4 by etching. By introducing impurity into the substrate 1, a source.drain diffusion region 9 is formed. Finally an interlayer insulating film 10 is deposited and a source.drain electrode 12 and a gate electrode 13 are formed.
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