| 摘要 |
<p>PURPOSE:To maintain hole accuracy and prevent the contamination of a junction surface, by a method wherein a photoetching is performed whose depth leaves a part of thickness of an insulating film on a semiconductor wafer surface, to form a contact hole for a Schottky junction. CONSTITUTION:On a GaAs wafer 1, an SiO2 film 2 is stuck, thereon a first photoresist layer 3 for making a contact hole is formed, an etching applying a hydrofluoric acid system etching liquid is performed, and a film 2 exposed in the layer 3 is left by the thickness of several hundred Angstrom . Then, a second photoresist layer 5 surrounding this part is formed, the film 2 left in the preceding process is wholly eliminated by etching, thereby the wafer 1 is exposed, metal is vapor-deposited on the whole surface, then the layer 5 is eliminated together with the metal stuck on the layer, a hole is made in a contact hole region, and Schottky metal 7 only extending on the peripheral film 2 is left. Thereby the film 2 is kept protected to immediately before the Schottky metal is formed, and the contamination of metal and vaporization of As do not generate.</p> |
