| 摘要 |
PURPOSE:To reduce a leakage current by using aluminum as the material of a gate electrode having a boundary from a gate insulating film, using Ta2O5 as a gate insulating film, and forming an Al2O3 of an oxide of a gate electrode material between the gate electrode and the Ta2O5. CONSTITUTION:Aluminum is formed as a gate electrode 11 on an insulative substrate 10 and etched in a gate electrode shape; Ta is used as a target, and Ta1O5 is formed as a gate insulating film 13 by reactively sputtering in an oxygen and argon mixture atmosphere. In this case, an Al2O3 layer 12 is formed in a boundary between the aluminum gate electrode and the Ta2O5 boundary. Then, an SiNX as a gate insulating layer 14 and an amorphous silicon as a semiconductor layer 15 are continuously formed. Thereafter, after the semiconductor layer is etched in a predetermined shape, a film is formed of the aluminum, and selectively etched to form a source electrode 16 and a drain electrode 17. Thus, the rising characteristics of an ON current are improved to obtain a transistor which has less ageing change of a threshold value voltage. |
