| 摘要 |
PURPOSE:To absorb the damage caused by dry etching process indispensable for arrangeing an gate electrode having a vertical side surface, by forming an electrically inactive region, that is, an insulative layer on a conductive semiconductor layer. CONSTITUTION:Conductive semiconductor 2, WSi 3, and low resistance metal W 4 are formed on the surface of a GaAs semiconductor substrate 1. Thereon a photoresist layer 5 is formed leaving only a part where a gate electrode is formed, and then the gate electrode 7 is formed. Next, after a photoresist layer 8 is formed, ions are implanted, and a protrusion 10 is formed at the bottom of the conductive semiconductor layer 2 corresponding with an electrically inactive region 9. After a sidewall 12 is formed, ions are implanted, and a low impurity concentration region 14 and a high impurity concentration regions 15 are formed. Next, an ohmic electrode 20 is formed and an FET 21 is completed.
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