| 摘要 |
PURPOSE:To attain miniaturization and low cost by forming a piezoelectric thin film on a pattern of a 1st surface acoustic wave provided on an insulation substrate and forming the 2nd surface acoustic wave pattern having a frequency different from that of the 1st surface acoustic wave on the piezoelectric thin film. CONSTITUTION:A pattern 2 of the 1st surface acoustic wave device is formed on the insulation substrate 1 and the piezoelectric thin film 3 is formed on the pattern 2 by the method such as sputtering. Moreover, a pattern 4 of the 2nd surface acoustic wave device having a frequency different from that of the 1st surface acoustic wave device is formed on the film 3. The film thickness of the piezoelectric thin film 3 is selected to be a proper value to obtain a sufficient coupling coefficient. Thus, the devices of two characteristics are formed in the size of one chip thereby realizing miniaturization and low cost.
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