| 摘要 |
PURPOSE:To generate light short pulses stably in a large coupling quantity of return light by a semiconductor laser integrated element, to which a resonator consisting of an active layer and an optical guide layer optically coupling with the active layer is mounted, and an oscillator modulating injected currents to an active layer region. CONSTITUTION:An n-InGaAsP clad layer 12, an active layer 13 and a p-InP clad layer 30 are grown on a substrate 1. An SiO2 film is prepared onto the layer 30, the SiO2 film except an active layer region 22 is removed through patterning, and the p-InP layer 30 and the InGaAsP active layer 13 are etched selectively. An InGaAsP optical guide layer 50 and a p-InP clad layer 31 are grown, the layer 31 is flattened, and a p<+> InGaAsP cap layer 20 is grown in an epitaxial manner in succession. A modulating electrode 61 is shaped onto the cap layer 20 fin the active layer, region 22. A groove 90 deeper than the cap layer 20 is formed between the active layer region 22 and an optical guide layer 23 in order to prevent the injection of currents into the optical guide layer 50. |
