| 摘要 |
PURPOSE: To contrive high density integration, realize the reduction of an ON-resistance, and shorten the process, by making a source contact region fine. CONSTITUTION:A gate oxide film 3 and a gate electrode 4 of polysilicon are formed on an N-type Si semiconductor substrate 1. After the polysilicon surface is oxidized, a silicon nitride film 10 is coated, and a high density P-type region 2 is formed by ion implantation through an aperture part made in the mask 10. Then an oxide film 11 is formed only on the aperture pert on a region 2 by selective oxidization applying the film 10 to a mask. Next, a P-type region 5 for channel forming and, in addition, an N<+>type source region 7 are formed applying the film 11 and the electrode 4 to a mask. The surface of the region 2 is protected by the film 11, and the regions 5 and 7 are formed by self- alignment of the region 2. By the etching of the film 11, the silicon surface of the region 2 is exposed, and further an oxide film under the film 10 is subjected to a horizontal etching to expose the silicon surface of the region 7. Finally the film 10 is eliminated, and a source contact window is completed. |
