| 摘要 |
PURPOSE:To obtain the titled body having a very small dark attenuation of the electrostatic charge potential by constituting a photoconductive layer from an n-type semiconductor contg. an amorphous silicon contg. hydrogen atom as a main component, and also contg. phosphorous atom as an impurity, and by constituting an intermediate layer from a dried curing material of a solution contg. at least one kind of an org. titanium compd. CONSTITUTION:The intermediate layer is laminated on a conductive substrate. The dried curing material of the solution contg. at least one kind of the org. titanium compd. is used as the intermediate layer. The n-type semiconductor comprising the amorphous silicon contg. hydrogen atom as the main component, and also contg. phosphorous atom and at least one kind of carbon atom, nitrogen atom or oxygen atom as an impurity is used as the photoconductive layer. The further preferable org. titanium compd. is a titanium complex and a titanium alkoxide. Thus, the high mechanical strength, the high durability, the high heat-resisting property and the high photosensitivity of the titled body are maintained, and the high electric charge holding power of the titled body is obtd., without being affected by the surroundings of an outside and the number of using, thereby obtaining the picture image having excellent quality. |
