| 摘要 |
PURPOSE:To sputter a film on a substrate such as a thermoplastic resin substrate having a low heat-resistant temp. without reducing the film forming rate by circulating a sputtering gas around the outer wall of a liquefied nitrogen tank provided in the sputtering chamber of a sputtering device to cool the gas, and then passing the gas over the rear surface of a film forming substrate. CONSTITUTION:The substrate 8 fixed to a substrate holder 7 is transferred to a vacuum treating chamber 1 by conveying systems 13, 14, and 15, and then the inside of the vacuum treating chamber 1 is evacuated to high vacuum. A sputtering gas is introduced between the outer wall 9 of the liquefied nitrogen tank 2 provided on the rear surface side of the substrate and a cooling plate 5 from a sputtering gas source 12 through an inlet 6, circulated around the outer wall of the liquefied nitrogen tank by a slit 18, and cooled. A fixed amt. of the gas is blown off from a blowoff port 17 to sufficiently cool the substrate 8, hence the temp. increase from the surface is prevented, and a film can be sputtered at a fixed film forming rate even on a low-m.p. substrate of a thermoplastic resin, etc. |
