发明名称 CHARACTERISTIC EVALUATOR FOR SEMICONDUCTOR ION SENSOR
摘要 PURPOSE:To achieve a quick characteristic evaluation, by a method wherein porous material impregnated with a solution and having an electrode inside so as to come into contact with an ion sensitive part of semiconductor ion and a probe is brought into contact with the electrode section of an ion sensor to obtain an output signal thereof. CONSTITUTION:Porous material 3 such as cotton containing pH reference liquid of pH 6.86 with an electrode 5 inside is put in contact with a row of ion sensing parts in a plurality of ion sensitive FE type transistors ISFET made on a sapphire substrate 1. A probe 4 is brought into contact with each electrode section on the sources and drains of the ISFETs. the electrode 5 acts as a gate. A signal from the electrode 5 is sent to a characteristic evaluating means 7 to process. In this case, the drains of the ISFETs arranged in a row are connected in common and the transistors are measured sequentially one at a time by opening or closing each source thereof with a switch 6 thereby enabling a quick characteristic evaluation.
申请公布号 JPS62225939(A) 申请公布日期 1987.10.03
申请号 JP19860070151 申请日期 1986.03.27
申请人 NEC CORP 发明人 MURAKAMI TORU
分类号 G01N27/26;G01N27/30;G01N27/414 主分类号 G01N27/26
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