发明名称 |
Process for manufacturing isolated semi conductor components in a semi conductor wafer |
摘要 |
A process for manufacturing isolated semi conductor components in a semi conductor wafer of the type used in bipolar technology. In this process, polycrystalline silicon is deposited in a recess in a silicon substrate whose walls are insulated by a silicon nitride layer except for an opening formed in this nitride layer at the bottom of said recess. Then, the polycrystalline silicon is re-epitaxied so as to become monocrystalline silicon by thermal heating from the "nucleus" formed by the underlying silicon in said opening.
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申请公布号 |
US4679309(A) |
申请公布日期 |
1987.07.14 |
申请号 |
US19840621733 |
申请日期 |
1984.06.18 |
申请人 |
SOCIETE POUR L'ETUDE ET LA FABRICATION DE CIRCUITS INTEGRES SPECIAUX E.F.C.I.S. |
发明人 |
BOREL, JOSEPH |
分类号 |
H01L21/76;H01L21/20;H01L21/331;H01L21/762;H01L29/73;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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