| 摘要 |
PURPOSE:To achieve an improvement in the dielectric strength of an insulation material between a polysilicon layer and a gate electrode, by positioning the side of the polysilicon layer inside the side of a first insulating film and covering the former with a second insulating film of good dielectric strength. CONSTITUTION:A gate insulation film 2 is formed on a p-type semiconductor substrate 1, on which a phosphorus-doped polysilicon layer 3 is formed. Further, a first insulation film 4 is continuously formed thereon to patternize both the polysilicon layer 3 and the first insulation film 4, thus zoning a required active area X. The side only of the polysilicon layer 3 is then etched by the isotropic etching method. A silicon nitride film, a second insulating film 5, is then formed all over the area. Then, by a full area etching back using the anisotropic etching method, both surfaces of the first insulating film 4 and gate insulating film 2 are exposed, leaving the second insulating film 5 covering the side of the polysilicon layer 3. Then, a polysilicon film 7 is formed all over the exposed surfaces, and is subjected to patterning to form a gate electrode 7.
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