| 摘要 |
PURPOSE:To detect surely the end point of an etching, by employing the emission intensity of AlCl with a specified wavelength in the case where aluminum or aluminum alloy is subjected to etching with SiCl4. CONSTITUTION:The wavelength of a monochrometer 2 is set as 261.4nm which is an emission wavelength of AlCl, SiCl4 gas is introduced into an etching chamber 1, and a high frequency voltage is applied between electrodes 8 and 7 to make the gas plasma, whereby aluminum or aluminum alloy of a sample 9 is subjected to etching. By investigating the emission intensity variation of AlCl whose wavelength is 261.4nm, the difference of emission intensity between the state in which an etching is progressing and the end point of the etching is recognized clearly, so that the end point of the etching can be surely detected.
|
