| 摘要 |
Provisions for an overvoltage self-protection in a thyristor consisting of a cathode emitter region (12), a cathode base region (14), an anode base region (18) and an anode emitter region (22), further consisting of metal electrodes in ohmic electrical contact (28,36,34) with the cathode emitter region, anode emitter region and one of the base regions (e.g., 14) which provisions comprise forming a well (46) in one of said base regions (e.g. 14) and disposing an electrical contact (48) in this well, which is on its part in ohmic electrical contact with the above mentioned base region (14).
<??>The process for producing overvoltage self-protection in the thyristor comprises the use of a laser or of other drilling or abrasing means, which are, while continually monitoring the I V- characteristic of the thyristor, applied until the desired blocking voltage is realized. |
