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发明名称
Semiconductor device
摘要
A semiconductor device is disclosed which has a mesa structure. A negative chamfer (8) is formed only in that part of the barrier layer or depletion zone which forms on the upper side of a p-n junction (10). <IMAGE>
申请公布号
DE3632489(A1)
申请公布日期
1987.04.16
申请号
DE19863632489
申请日期
1986.09.24
申请人
MITSUBISHI DENKI K.K.
发明人
YOSHIDA,SHIGEKAZU
分类号
H01L29/74;H01L29/06;(IPC1-7):H01L29/06
主分类号
H01L29/74
代理机构
代理人
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