| 摘要 |
PURPOSE:To form a uniform enzyme immobilized film to a large thickness by removing a photoresist in the place where the enzyme immobilized film is to be provided on a semiconductor field effect type ion sensor, subjecting said place to a primer treatment and providing the enzyme immobilized film. CONSTITUTION:An n type silicon region 2, a p-type silicon region 3, a silicon oxide film 4, a silicon nitride film 5 and an org. solvent soluble photoresist film 6 are provided on a substrate 1. The photoresist film 6 of the place where the enzyme immobilized film is to be provided is removed by exposing and developing. After a hydrophilic primer is coated thereon, a protein soln. contg. enzyme and crosslinking agent is coated thereon to form the enzyme immobilized film 8. The 2nd enzyme immobilized film 9 is formed therein to increase the thickness of the film. The photoresist film 6 is thereafter dissolved by an org. solvent so that only the enzyme film immobilized film 10 remains. Since the number of coating the protein soln. including the enzyme and crosslinking agent is adjusted, the thickness of the enzyme immobilized film is made uniform and large. |
