| 摘要 |
PURPOSE:To realize a low current consumption and a small chip area even in a large capacity memory by inputting a signal to a dummy memory circuit so as to halve number of dummy memory circuits via a transmission gate transistor (TR) controlled by an operating/nonoperating control signal of a left or right side memory circuit. CONSTITUTION:The transmission gate TR7 is provided to input a control signal generated by a timing circuit 2 to a dummy memory circuit selectively. The left side memory circuit and the right side memory circuit are operated separately and both the circuits are not operated at the same time. When the left side memory circuit is operated, the left side transmission gate is turned on at the same time the dummy circuit is operated, the right side transmission gate is turned off and the right side memory circuit is not operated by using the left side control signal. When the right side memory circuit is operated, the dummy circuit is operated similarly by the right side control signal only.
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