| 摘要 |
PURPOSE:To prevent the efficiency of an amorphous silicon solar cell from dropping by a method wherein the irradiation point of a laser beam and its vicinity are put in an atmosphere of heating vapor. CONSTITUTION:An Al layer 2a and a stainless steel layer 2b are deposited in order on a substrate 1 consisting of a polyethylene terephthalate film and a metal electrode layer 2 is formed. An amorphous Si semiconductor layer 3 in a PIN-type constitution and a transparent electrode layer 4 consisting of an indium oxide layer are provided in order on the layer 2, whereby the solar cell is formed. This cell is split by cutting a groove 11 up to reach the bottom surface of the layer 2 using a YAG laser. At this time, heating vapor, wherein O2 gas is used as the carrier gas, is jetted to the irradiation point of the laser beam and the irradiation point and its vicinity are put in an atmosphere of the heating vapor. By this way, crystallization of the layer 3 and a reduction in the characteristics of the solar cell are prevented. |
