| 摘要 |
PURPOSE:To shorten the fall time of a word line and prevent the reduction of room for an operation due to a double selection of the word line by conducting a discharging transistor only during a change over transition time of the selection of the word line and flowing a large discharge current. CONSTITUTION:A word line WT1 is driven by a transistor Q11 and during the selection thereof, an electric potential is set at high level, and during the non-selection thereof, it is set at low level. A word driving input P1 falls from the high level to the low level and in a transition time from the selection condition to the non-selection condition, in order to discharge a spare electric charge accumulated in the word line WT1 having a large parasitic capacity with respect to the fall of the input P1, a wave shape of a node point B is soft comparing with a fall wave shape of the node point A and an electric potential of the node point B is higher in level than the node point A. A transistor Q13 is non- conductive, a reverse output (C) and a discharge control emitter follower output (D) rise from a low condition to a high condition, a discharging transistor Q16 is also conductive, a rapid discharge is produced and the electric potential of the line WT1 falls rapidly. |
