| 摘要 |
<p>PURPOSE:To obtain a semiconductor device having an excellent moisture resistance and to eliminate characteristics such as high temperature rhoV characteristic, boiling rhoV characteristic and boiling water absorption rate of sealing resin itself by containing specific contents of the hydroxide of alkali metal and/or alkali earth metal in an epoxy resin composition. CONSTITUTION:0.001-0.015g equivalent/kg of hydroxide of alkali metal and/or alkali earth metal is contained in epoxy resin composition made of epoxy resin, epoxy resin hardener and inorganic filler of sealing material. If less than 0.001g equivalent, corrosion resistance effect of aluminum electrode due to permeating water can be hardly effectively performed, while if more than 0.05g equivalent, the high temperature rhoV characteristic, boiling rhoV characteristic and boiling water absorption rate of a semiconductor device are deteriorated. The epoxy resin may use any of two ore more epoxy groups in one molecule like resin sealing molding material such as bis-phenol A-type epoxy resin.</p> |
