| 摘要 |
<p>PURPOSE:To eliminate the defect in a spacer edge by forming a slructure member having a stripe-shaped side wall, on one of a pair of electrode substrates, executing an uniaxial orientation processing to the other, and making its processing direction parallel or orthogonal to the structure member. CONSTITUTION:A substrate 110 superposed in parallel to a processed substrate 101 is provided, and on the substrate 110, an electrode group consisting of plural electrodes 111 is formed, and furthermore, on said electrode group, an insulating layer 112 is formed. A signal electrode 111 and a scan electrode 102 are brought to wiring by a matrix structure. The insulating film 112 prevents the generation of a current flowing to a liquid crystal layer in the same way as an insulating film 103. A uniaxial orientation processing is executld to a plane 113 made by the insulating film 112 of the substrate 110, and its orienting direction is made roughly parallel or orthogonal to the extended direction of a spacer member 104. In such a way, even in a storage state that a defect is apt to appear especially, a defect in a spacer edge can be eliminated.</p> |
