发明名称 |
LIQUID CRYSTAL CHARGING METHOD |
摘要 |
PURPOSE:To improve the production yield by setting the supporting area of a vessel to prescribed % of a substrate area to clip the vessel. CONSTITUTION:Gap defects start decreasing when the area of contacting parts 6 and 6 of a clipping tool exceeds 5% of the area of substrates 1 and 1, and they are reduced according as the supporting area is increased. It is not desirable that the supporting area is 100% of the area of substrates 1 and 1 because a liquid crystal 5 penetrates gaps between substrates 1 and 1 and contacting parts 6 and 6 by capillary phenomena. Consequently, a vessel 4 is clipped with 5-60%, more desirably, 30-50% supporting area of the substrate area to attain >=99.6% yield. |
申请公布号 |
JPS60175026(A) |
申请公布日期 |
1985.09.09 |
申请号 |
JP19840030755 |
申请日期 |
1984.02.20 |
申请人 |
SANYO DENKI KK;TOTSUTORI SANYOU DENKI KK |
发明人 |
NARITA KENICHI;MATSUMOTO AKIRA |
分类号 |
G02F1/13;G02F1/1341;G09F9/35 |
主分类号 |
G02F1/13 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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