| 摘要 |
PURPOSE:To form a superconducting switch element by injecting quasi-particles to a superconducting electrode by one junction formed to a crossed type and extracting the change of the state of the superconducting electrode as the change of the voltage-current characteristics of the superconducting electrode. CONSTITUTION:An Si substrate 11 is thermally oxidized to form SiO212, and a superconductor layer 13 in not more than 1,000Angstrom thickness is shaped on the SiO212, and an electrode 14 is lead out. SiO 15 as an inter-layer insulating layer is formed, and an electrode 17 is shaped through a tunnel barrier layer 16 so as to cross with the electrode 14. The switch element has structure in which the thin superconductor layer 13 of not more than quasi-particle diffusion length (approximately 1,000Angstrom ) is connected to the electrode 17 consisting of a normal conductor layer as a quasi-particle injecting source or a semiconductor or superconductor layer through the tunnel barrier layer 16 as a means injecting quasi-particles. When using a semiconductor, a Schottky barrier is utilized directly joined with the electrode 13. The electrode layers 13 and 17 cross in a crossed shape. |
