| 摘要 |
PURPOSE:To suppress lowly dispersion of the characteristics of the elements of a semiconductor device by a method wherein dummy patterns are provided as to make the distances between the respective patterns to become to nearly a constant. CONSTITUTION:After field oxide films 15 are formed on a silicon substrate 14, gate oxide films 16 are formed, and phosphorus is added according to diffusion using POCl3. Then the polycrystalline silicon layer added with impurities thereof is etched using resists 19, etc. as masks to form floating gates 20 and dummy patterns 21 at the same time. Then the resist pattern is removed. By providing the dummy patterns, when a gate electrode material is patterned, it becomes to be the dummy patterns to receive an influence according to dependence upon pattern, and an actual influence to gate electrodes is reduced. |
