| 摘要 |
PURPOSE:To obtain the semiconductor film having excellent electric characteristic by a method wherein an electromagnetic coil, with which a magnetic field will be formed, is wound around the substrate whereon a semiconductor film obtained by the plasma decomposition of reaction gas will be formed. CONSTITUTION:An electromagnetic coil 8, the winding direction of which is in parallel with the surface of a substrate 6, is provided in such a manner that it surrounds the substrate 6, a high frequency electrode 3 and an earthing electrode 4. When a DC current is applied to the coil 8, a magnetic field 9 is formed as shown by the broken lines in the diagram. When reaction gas is introduced into a reaction chamber 1 through the intermediary of an introducing hole 7 and plasma is excited by performing a high frequency glow discharge between electrodes 3 and 4, high speed charge particles perform a helical cyclotron movement along the magnetic field. The movement direction of the charged particles does not cross at right angle with the surface of the substrate 6 which is being formed by plasma decomposition, the number of collision with the surface of the substrate 6 is reduced remarkably, and the damage on the semiconductor film is also reduced. |
