| 摘要 |
PURPOSE:To obtain laser structure having high reliability by holding a semiconductor first layer between second and third layers, forbidden band width thereof are larger than that of the first layer and refractive indices thereof are smaller than that of the first layer, forming a stepped section to the second layer and forming a fourth region to a thin-film section of the outside of a light-emitting region. CONSTITUTION:A Ga1-yAlyAs first layer 12, a Ga1-xAlxAs second layer 11 and a third layer 13 are deposited on a GaAs or Ga1-zAlzAs substrate 10, to which a beltlike recessed groove is shaped, in predetermined order. 0<=z<y<x<1 is formed in general. A thin layer section in t1 thickness of the layer 11 is made sufficiently thinner than a thick layer section in t2 thickness, and kept within an extent that waveguide beams projected along the layer 12 are transmitted partially over the substrate 10. According to the structure, the change of a refractive index or the change of the gain loss of beams or operation equivalent to a waveguide, in which both changes are generated, is generated in the x direction of a waveguide layer, refractive indices are altered in the y direction by the material themselves of the layers 11, 13, and a region 12', a refractive index thereof effectively differs from that of the layer 12, can also be set by the transmission effect of beams to the base body 10 in the x direction. Accordingly, laser structure, a transverse oscillation attitude thereof is stabilized and which has high reliability, is obtained easily. |
