| 发明名称 |
Implantation of an insulative layer |
| 摘要 |
Method for preparing electrically conductive layers on or in insulating layers, characterized by the feature that the conductivity of at least part of the insulating layer is increased by ion implantation.
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| 申请公布号 |
US4466839(A) |
申请公布日期 |
1984.08.21 |
| 申请号 |
US19820419594 |
申请日期 |
1982.09.17 |
| 申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
DATHE, JOACHIM;HOLTSCHMIDT, WALTER |
| 分类号 |
H01L27/04;H01L21/02;H01L21/265;H01L21/31;H01L21/3115;H01L21/3205;H01L21/768;H01L21/822;H01L29/06;H01L29/40;(IPC1-7):H01L7/00 |
主分类号 |
H01L27/04 |
| 代理机构 |
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