| 摘要 |
PURPOSE:To contrive to reduce the amount of Au use and contrive to improve the heat resistance and the mounting property of a chip by a method wherein an Au plated layer is provided at the uppermost layer, and an Ni plated layer heat- treated in a specific range of temperature in reductive atmosphere is provided at the layer immediately thereunder. CONSTITUTION:A W metallized part 2 is formed on a ceramic plate 1, and the Ni plated layer 3 is formed thereon, which are thereafter heat treated in the range of temperature of 900-1,400 deg.C in the reductive atmosphere. The range of temperature less than 900 deg.C causes the remarkable discoloration of the Au plated layer of a metallized pattern in the mounting treatment for the chip, resulting in imperfect mounting. Next, the Au plated layer 4 is formed thereon. Then an Au-Si pre-form is interposed between the chip Au and the plated layer and then fused by heating to approx. 450 deg.C. An Au-Si eutectic crystal 6 is produced between the chip 5 and the Au plated layer 4 over the entire surface without gaps, and a sufficient meniscus can be obtained, which has therefore an effect on the improvement of the mounting property, cap sealing property, and solder wetting property. |
